Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication

نویسنده

  • V. I. Vdovin
چکیده

In this paper, the regularities of dislocation pattern formation in single layer heterostructures with low lattice mismatch (f < 1%) are reviewed. The main attention is focused on the recently suggested mechanisms of dislocation nucleation and multiplication. An evolution of dislocation pattern from regular flat misfit dislocation network to the dense three-dimensional one was found to proceed during the epitaxial growth. Experimentally found regularities of dislocation structure formation are treated in terms of the influence of the nature of materials contacting at the interface upon the dislocation behavior. Special emphasis is given to the role of microsegregations and selfpoint defects in the alloy matrix in dislocation generation, propagation and multiplication.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

New mechanism for dislocation blocking in strained layer epitaxial growth

Dislocation interactions play a critical role in plasticity and heteroepitaxial strain relaxation. We use real time transmission electron microscopy observations of the interaction between threading and misfit dislocations in SiGe heterostructures to investigate interactions quantitatively. In addition to the expected long-range blocking of threading segments, we observe a new short-range mecha...

متن کامل

Threading dislocation generation in epitaxial „Ba,Sr...TiO3 films grown on „001... LaAlO3 by pulsed laser deposition

Epitaxial Ba0.6Sr0.4TiO3 films were grown onto ~001! LaAlO3 by pulsed-laser deposition, and the dislocation structures of the films were investigated using transmission electron microscopy. Misfit dislocations with a periodicity of about 7 nm and Burgers vectors b5a^100& were observed at the interface. A high density of threading dislocations was present the films and these also had b 5a^100& ....

متن کامل

Formation of misfit dislocations in strained-layer GaAs/In

The Open University's repository of research publications and other research outputs Formation of misfit dislocations in strained-layer GaAs/In x Ga 1–x As/GaAs heterostructures during postfabrication thermal processing Journal Article (2003). Formation of misfit dislocations in strained-layer GaAs/InxGa1–xAs/GaAs heterostructures during postfabrication thermal processing. It is demonstrated th...

متن کامل

Perfect crystals grown from imperfect interfaces

The fabrication of advanced devices increasingly requires materials with different properties to be combined in the form of monolithic heterostructures. In practice this means growing epitaxial semiconductor layers on substrates often greatly differing in lattice parameters and thermal expansion coefficients. With increasing layer thickness the relaxation of misfit and thermal strains may cause...

متن کامل

Defect microstructures in epitaxial PbZr0.2Ti0.8O3 films grown on (001) SrTiO3 by pulsed laser deposition

Transmission electron microscopy has been used to investigate the character and distribution of the microstructural features in epitaxial (001) ferroelectric PbZr0.2Ti0.8O3 films grown on (001) SrTiO3 substrates by pulsed laser deposition. The TEM observations revealed that the films were predominantly c-oriented with embedded a1and a2-oriented domains lying on {101} planes. The substrate/film ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1999